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Schottky Barrier Diodes (SBD)
1
Publication date: June 2002 SKH00118AED
MAS3795E
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
•
High-density mounting is possible
•
Optimum for high frequency rectification because of its short
reverse recovery time (t
rr
)
•
Low forward voltage V
F
optimum for low voltage rectification
V
F
= < 0.3 V (at I
F
= 1 mA)
•
SSS-Mini type 3-pin package
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
R
30 V
Peak reverse voltage V
RM
30 V
Forward current (DC)
Single I
F
30 mA
Double 20
Peak forward current
Single I
FM
150 mA
Double 110
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Internal Connection
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
V
R
= 30 V 30 µA
Forward voltage (DC) V
F1
I
F
= 1 mA 0.3 V
V
F2
I
F
= 30 mA 1.0
Terminal capacitance C
t
V
R
= 1 V, f = 1 MHz 1.5 pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 10 mA 1.0 ns
I
rr
= 1 mA, R
L
= 100 Ω
Detection efficiency η V
in
= 3 V
(peak)
, f = 30 MHz 65 %
R
L
= 3.9 kΩ, C
L
= 10 pF
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Unit: mm
1.20±0.05
0.52±0.03
0 to 0.01
0.15 max.
5°
0.15 min.
0.80
±0.050.15 min.
0.33
(0.40)(0.40)
12
3
5°
0.80
±0.05
1.20±0.05
+0.05
–0.02
0.10
+0.05
–0.02
0.23
+0.05
–0.02
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz 3.
*
: t
rr
measuring instrument
1: Anode 1
2: Anode 2
3: Cathode 1, 2
SSSMini3-F1 Package
Marking Symbol: M3
12
3
This product complies with the RoHS Directive (EU 2002/95/EC).