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Zener Diodes
Publication date: February 2007 SKE00031AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MAYS0750Y
Silicon epitaxial planar type
For ESD protection of high speed signal line
Features
Maintain signal cobs with low insertion loss, distortion.
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Total power dissipation
*
1
P
T
150 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
–55 to +150
°C
Electrostatic discharge
*
2
ESD
±8
kV
Note)
*
1 : P
T
= 150 mW achieved with a printed circuit board.
*
2 : Test method: IEC61000-4-2
(C = 150 pF, R = 330 W, Contact discharge: 10 times)
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Breakdown voltage
*
V
BR
I
R
= 1 mA 6.0 7.5 V
Reverse current I
R
V
R
= 5 V 2
mA
Terminal capacitance C
t
I
R
= 0 V, f = 1 MHz 0.8 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.
*
: V
Z
guaranted 20 ms after current flow.
Marking Symbol: CY
Unit: mm
1: Anode
2: Cathode
EIAJ: SC-79 SSMini2-F1 Package
0.80
+0.05
–0.03
0.60
+0.05
–0.03
0.12
+0.05
–0.02
1.20
+0.05
–0.03
0
+0
–0.05
0.30±0.05
0.01±0.01
1.60±0.05
0.01±0.01
1
2
0.80±0.05(0.80)
(0.60)
(0.15)
(0.60)
5°
5°