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Zener Diodes
Publication date: November 2008 SKE00020BED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MAZDxxx Series
Silicon planar type
For constant voltage, constant current, waveform clipper and
surge absorption circuit
Features
Low noise type
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Repetitive peak forward current I
FRM
200 mA
Total power dissipation
*
P
T
120 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
–55 to +150
°C
Note)
*
: P
T
= 100 mW achieved with a printed circuit board.
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 10 mA 0.9 1.0 V
Zener voltage
*
V
Z
I
Z
Specified value
Refer to the list of the
electrical characteristics
within part numbers
V
Zener operating resistance R
Z
I
Z
Specified value
W
Reverse current I
R
V
R
Specified value
mA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz
3. The temperature must be controlled 25°C for V
Z
mesurement.
V
Z
value measured at other temperature must be adjusted to V
Z
(25°C)
4.
*
: V
Z
guaranted 20 ms after current flow.
Package
Code
SSSMini2-F2
Pin Name
1: Anode
2: Cathode
Marking Symbol:
Refer to the list of the electrical characteristics
within part numbers