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Zener Diodes
1
Publication date: October 2007 SKE00034BED
This product complies with the RoHS Directive (EU 2002/95/EC).
MAZSxxxG Series
Silicon planar type
For constant voltage, constant current, waveform clip-
per and surge absorption circuit
■ Features
• Low noise type
• V
Z
rank classified(V
Z
= 2.4 V to 39 V)
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Repetitive peak forward current I
FRM
200 mA
Total power dissipation
*
P
tot
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note)
*
: With a printed circuit board
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 10 mA 0.9 1.0 V
Zener voltage
*
2
V
Z
I
Z
Specified value V
Reverse current I
R
V
R
Specified value µA
Zener rise operating resistance R
ZK
I
Z
Specified value Ω
Zener operating resistance R
Z
I
Z
Specified value Ω
Temperature coefficient of zener voltage
*
3
S
Z
I
Z
Specified value mV/°C
■ Common Electrical Characteristics T
a
= 25°C±3°C
*
1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Rated input/output frequency: 5 MHz
3.
*
1: The V
Z
value is for the temperature of 25°C. In other cases, carry out the temperature compensation.
*
2: Guaranteed at 20 ms after power application.
*
3: T
j
= 25°C to 150°C
1
2
Refer to the list of the
electrical characteristics
within part numbers
■ Package
•
Code
SSMini2-F4
•
Pin Name
1: Anode
2: Cathode
■ Marking Symbol
Refer to the list of the electrical
characteristics within part numbers
■ Internal Connection