Filter
Top Products
Multi Chip Discrete
Publication date: November 2008 SJF00111AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MTM86628
Silicon P-channel MOS FET (FET)
Silicon epitaxial planar type (SBD)
For DC-DC converter
For switching circuits
Overview
MTM86628 is the composite MOS FET (P-channel MOS FET and Schottky
Barrier Diode) that is highly suitable for DC-DC converter and other switching
circuits.
Features
Built-in schottky barrier diode: V
R
= 15 V, I
F
= 700 mA
Low on-resistance: R
on
= 300 mW (V
GS
= –4.0 V)
Low short-circuit input capacitance (Common source): C
iss
= 80 pF
Small surface mounting halogen-free package: WSSMini6-F1 (1.6 mm × 1.6
mm × 0.5 mm)
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
FET
Drain-source surrender voltage V
DSS
–20 V
Gate-source surrender voltage V
GSS
±12
V
Drain current I
D
–1.0 A
Peak drain current
*
1
I
DP
–4.0 A
Channel temperature
T
ch
150
°C
Storage temperature T
stg
–55 to +150
°C
Total power dissipation
P
D1
*
2
540 mW
P
D2
*
3
150 mW
SBD
Reverse voltage V
R
15 V
Forward current (Average) I
F(AV)
700 mA
Junction temperature T
j
125
°C
Storage temperature T
stg
–55 to +125
°C
Note)
*
1: t = 10 µs, Duty Cycle < 1%
*
2: Glass epoxy board: 25.4 mm × 25.4 mm × 0.8 mm
Copper foil of the drain portion should have a area of 300 mm
2
or more
*
3: Stand-alone (without the board)
Package
Code
WSSMini6-F1
Pin Name
1: Gate 4: Cathode
2: Source 5: Drain
3: Anode 6: Drain
Marking Symbol: PL
Internal Connection
1
(G)
2
(S)
3
(A)
(K)
4
(D)
5
(D)
6