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SHE00054BED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: October 2008
1
Phototransistors
PNA1803L
Silicon planar type
For optical control systems
Features
Fast response
Wide spectral sensitivity characteristics
φ3 plastic package
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-emitter voltage (Base open) V
CEO
20 V
Emitter-collector voltage (Base open) V
ECO
5 V
Collector current I
C
20 mA
Collector power dissipation
*
P
C
50 mW
Operating ambient temperature T
opr
–25 to +85
°C
Storage temperature T
stg
–30 to +100
°C
Electrical-Optical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Photocurrent
*
1
I
L
V
CE
= 10 V, L = 1
000 lx 1.0 3.0 mA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 10 V 1 500 nA
Peak sensitivity wavelength
λ
PD
V
CE
= 10 V 800 nm
Half-power angle
θ
The angle when the photocurrent is
halved
30
°
Rise time
*
2
t
r
V
CC
= 10 V, I
L
= 1 mA, R
L
= 100 W
2.5
µs
Fall time
*
2
t
f
3.5
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed by disregarding radiation.
4.
*
1: Source: Tungsten lamp (color temperature 2 856K)
*
2: Switching time measurement circuit
50 Ω
R
L
V
CC
Sig. out 10%
90%
Sig. in
t
r
t
f
(Input pulse)
(Output pulse)
t
r
: Rise time
t
f
: Fall time