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SHE00042DED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: January 2009
1
PIN Photodiodes
PNZ334 (PN334)
Silicon planar type
For optical control systems
Features
Plastic type package (φ5)
High coupling capabillity suitable for plastic fiber
High quantum efficiency
High-speed response
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
30 V
Power dissipation P
D
100 mW
Operating ambient temperature T
opr
–25 to +85
°C
Storage temperature T
stg
–30 to +100
°C
Electrical-Optical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Photocurrent
*
1
I
L
V
R
= 10 V, L = 1
000 lx 5.0 7.0
µA
Drain current I
D
V
R
= 10 V 0.1 10 nA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 6 pF
Peak sensitivity wavelength
λ
PD
V
R
= 10 V 850 nm
Half-power angle
θ
The angle when the photocurrent is
halved
70
°
Rise time
*
2
t
r
V
R
= 10 V, R
L
= 50 W
2 ns
Fall time
*
2
t
f
2 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed by disregarding radiation.
4.
*
1: Source: Tungsten lamp (color temperature 2 856K)
*
2: Switching time measurement circuit
50 Ω
λ
P
= 900 nm
t
r
: Rise time
t
f
: Fall time
Sig. in
R
L
V
R
Sig. out
(Input pulse)
(Output pulse)
10%
90%
t
r
t
f
Note) The part number in the parenthesis shows conventional part number.