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SHD00730AEK
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: October 2008
1
Light Emitting Diodes
LNJ214R8ARA
Surface Mounting Chip LED
USS Type
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Power dissipation P
D
40 mW
Forward current I
F
15 mA
Pulse forward current
*
I
FP
50 mA
Reverse voltage V
R
3 V
Operating ambient temperature T
opr
–30 to +85
°C
Storage temperature T
stg
–40 to +100
°C
Note)
*
: The condition of I
FP
is duty 10%, Pulse width 1 msec.
Electro-Optical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Luminous intensity
*
I
O
I
F
= 10 mA 2.75 6.7 mcd
Reverse current I
R
V
R
= 3 V 100 µA
Forward voltage V
F
I
F
= 10 mA 1.72 2.5 V
Peak emission wavelength
λ
P
I
F
= 10 mA 655
nm
Spectral half band width
Δλ
I
F
= 10 mA 20
nm
Note)
*
: Measurement tolerance: ±20%
0
5
10
15
20
25
01.6 1.8 2.0 2.42.2
−20
20 40 60 80 100
20
0
40 60 80 100
0.1
1
3
5
10
0.3
0.1
30
50
0.5
1
5
3
100
10
30
50
100
0.3
0.5
1
3
5
10
I
O
I
F
I
F
V
F
I
F
T
a
0
20
40
60
80
100
600550 650 700
1 3 5 10 30 50 100
0
20
2040 4060 6080 80100 100
0°
10°10°
20°20°
30°30°
40°40°
50°50°
60°60°
70°70°
80°80°
80°
60°
40°
20°
90°90°
Directive characteristics
Relative luminous intensity (%)
Ambient temperature T
a
(°C)
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)Forward current I
F
(mA)
Luminous intensity I
O
(mcd)
Relative luminous intensity (%)
Relative luminous intensity T
a
Relative luminous intensity λ
P
Peak emission wavelength λ
P
(nm)
Forward current I
F
(mA)
Forward current I
F
(mA)
Relative luminous intensity (%)
Lighting Color
Red