Panasonic UP05C8B Network Card User Manual


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Multi Chip Discrete
Publication date: November 2005 SJJ00333AED 1
UP05C8B
Silicon NPN epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)
For CCD output circuits
Features
Two elements incorporated into one package (Tr + CCD load device)
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts.
Basic Part Number
2SC3931 + CCD load device
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Tr
Collector-base voltage
(Emitter open)
V
CBO
30 V
Collector-emitter voltage
(Base open)
V
CEO
20 V
Emitter-base voltage
(Collector open)
V
EBO
3 V
Collector current I
C
15 mA
CCD
load
device
Limiting element voltage V
max
40 V
Limiting element current I
max
10 mA
Overall
Total power dissipation
*
P
T
125 mW
Junction temperature T
j
125
°C
Storage temperature T
stg
–55 to +125
°C
Note)
*
: Measuring on substrate at 17 mm × 10 mm × 1 mm
Marking Symbol: 4F
Internal Connection
3
(G)
(S)
4
1
(E)
2
(B)
(C)
6
(D)
5
Tr
FET
Unit: mm
1: Emitter 4: Source
2: Base 5: Drain
3: Gate 6: Collector
SSMini6-F1 Package
(0.30) 0.10±0.02
6 5 4
1 2 3
5°
5°
0.20
+0.05
–0.02
1.60±0.050.55±0.05
0.10 max.
0 to 0.02
(0.20)
1.60±0.05
1番ピン端子表示
1.20±0.05
(0.20)
1.00±0.05
(0.50)(0.50)
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