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Multi Chip Discrete
Publication date: November 2005 SJJ00334AED 1
UP0KG8D
Silicon epitaxial planar type (SBD)
Silicon PNP epitaxial planar type (Tr)
For digital circuits
Features
Two elements incorporated into one package (SBD + Tr)
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts
Basic Part Number
MA2SD24 + UNR31A3
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
SBD
Reverse voltage V
R
20 V
Repetitive peak reverse voltage V
RRM
20 V
Forward current (Average) I
F(AV)
200 mA
Peak forward current I
FM
300 mA
Non-repetitive peak forward
surge current
I
FSM
1 A
Tr
Collector-base voltage
(Emitter open)
V
CBO
-50
V
Collector-emitter voltage
(Base open)
V
CEO
-50
V
Collector current I
C
-80
mA
Overall
Total power dissipation P
T
125 mW
Junction temperature T
j
125
°C
Storage temperature T
stg
–55 to +125
°C
Note)
*
: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Marking Symbol: 6K
Internal Connection
Unit: mm
1: Anode 4: Collector
2: Base 5: Cathode
3: Emitter SSMini5-F2 Package
–0.02
+0.05
0.20(0.30)
(0.50)
1 2 3
5 4
(0.50)
1.60±0.050.55±0.05
0 to 0.02
0.10 max
1.20±0.05
1.00±0.05
1.60±0.05
0.10±0.02
(0.20)
(0.20)
5
°
5
°
Display at No.1 lead
3
4
1 2
5
Tr
SBD