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Multi Chip Discrete
Publication date: October 2007 SJJ00402AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
UP0KG8DG
Silicon epitaxial planar type (SBD)
Silicon PNP epitaxial planar type (Tr)
For digital circuits
Features
Two elements incorporated into one package (SBD + Tr)
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts
Basic Part Number
MA2SD240G + UNR31A3G
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
SBD
Reverse voltage V
R
20 V
Repetitive peak reverse voltage V
RRM
20 V
Forward current (Average) I
F(AV)
200 mA
Peak forward current I
FM
300 mA
Non-repetitive peak forward
surge current
I
FSM
1 A
Tr
Collector-base voltage
(Emitter open)
V
CBO
-50
V
Collector-emitter voltage
(Base open)
V
CEO
-50
V
Collector current I
C
-80
mA
Overall
Total power dissipation P
T
125 mW
Junction temperature T
j
125
°C
Storage temperature T
stg
–55 to +125
°C
Note)
*
: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Package
Code
SSMini5-F3
Pin Name
1: Anode 4: Collector
2: Base 5: Cathode
3: Emitter
Marking Symbol: 6K
Internal Connection
3
4
1 2
5
Tr
SBD