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CY62128B
MoBL
®
Document #: 38-05300 Rev. *C Page 4 of 11
Thermal Resistance
[6]
Parameter Description Test Conditions 32 SOIC 32 TSOP 32 STSOP 32 RTSOP Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard test
methods and procedures for
measuring thermal impedance, per
EIA / JESD51.
66.17 97.44 105.14 97.44 °C/W
Θ
JC
Thermal Resistance
(Junction to Case)
30.87 26.05 14.09 26.05 °C/W
Capacitance
[6]
Parameter Description Test Conditions Max. Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz,
V
CC
= 5.0V
9pF
C
OUT
Output Capacitance 9 pF
AC Test Loads and Waveforms
90%
10%
V
CC
GND
90%
10%
ALL INPUT PULSES
5V
OUTPUT
100 pF
INCLUDING
JIG AND
SCOPE
5V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
R1 1800
Ω
R1 1800Ω
R2
990
R2
990Ω
639Ω
Equivalent to: THÉVENIN EQUIVALENT
1.77V
Rise TIme:
1 V/ns
Fall TIme
:
1 V/ns
Ω
Data Retention Waveform
Data Retention Characteristics
(Over the Operating Range for “LL” version only)
Parameter Description Conditions Min. Typ. Max. Unit
V
DR
V
CC
for Data Retention 2.0 V
I
CCDR
Data Retention Current V
CC
= V
DR
= 2.0V, CE
1
≥ V
CC
– 0.3V,
or CE
2
≤ 0.3V, V
IN
≥ V
CC
– 0.3V or, V
IN
≤
0.3V
1.5 15 µA
t
CDR
Chip Deselect to Data Retention
Time
0ns
t
R
Operation Recovery Time 70 ns
Note:
6. Tested initially and after any design or process changes that may affect these parameters.
V
CC
, min.
V
CC
, min.
t
CDR
V
DR
>
2 V
DATA RETENTION MODE
t
R
CE
1
V
CC
CE
2
or
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