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CY62136VN MoBL
®
Document #: 001-06510 Rev. *A Page 5 of 12
Switching Characteristics Over the Operating Range
[9]
Parameter Description
55 ns 70 ns
UnitMin. Max. Min. Max.
Read Cycle
t
RC
Read Cycle Time 55 70 ns
t
AA
Address to Data Valid 55 70 ns
t
OHA
Data Hold from Address Change 10 10 ns
t
ACE
CE LOW to Data Valid 55 70 ns
t
DOE
OE LOW to Data Valid 25 35 ns
t
LZOE
OE LOW to Low-Z
[10]
55ns
t
HZOE
OE HIGH to High-Z
[10, 11]
25 25 ns
t
LZCE
CE LOW to Low-Z
[10]
10 10 ns
t
HZCE
CE HIGH to High-Z
[10, 11]
25 25 ns
t
PU
CE LOW to Power-up 0 0 ns
t
PD
CE HIGH to Power-down 55 70 ns
t
DBE
BLE / BHE LOW to Data Valid 25 35 ns
t
LZBE
BLE / BHE LOW to Low-Z
[10, 11]
55ns
t
HZBE
BLE / BHE HIGH to High-Z
[12]
25 25 ns
Write Cycle
[12, 13]
t
WC
Write Cycle Time 55 70 ns
t
SCE
CE LOW to Write End 45 60 ns
t
AW
Address Set-up to Write End 45 60 ns
t
HA
Address Hold from Write End 0 0 ns
t
SA
Address Set-up to Write Start 0 0 ns
t
PWE
WE Pulse Width 40 50 ns
t
BW
BLE / BHE LOW to Write End 50 60 ns
t
SD
Data Set-up to Write End 25 30 ns
t
HD
Data Hold from Write End 0 0 ns
t
HZWE
WE LOW to High-Z
[10, 11]
20 25 ns
t
LZWE
WE HIGH to Low-Z
[10]
510ns
Notes:
9. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to V
CC
typ., and output loading of the specified
I
OL
/I
OH
and 30-pF load capacitance.
10.At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
11. t
HZOE
, t
HZCE
, and t
HZWE
are specified with C
L
= 5 pF as in (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
12.The internal write time of the memory is defined by the overlap of CE
LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can
terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
13.The minimum write cycle time for write cycle 3 (WE
controlled, OE LOW) is the sum of t
HZWE
and t
SD
.
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