CY62157CV30/33
Document #: 38-05014 Rev. *F Page 3 of 13
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground Potential...–0.5V to V
ccmax
+ 0.5V
DC Voltage Applied to Outputs
in High-Z State
[5]
....................................–0.5V to V
CC
+ 0.3V
DC Input Voltage
[5]
.................................–0.5V to V
CC
+ 0.3V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ................................................... > 200 mA
Operating Range
Device Range
Ambient
Temperature
[T
A
]
[6]
V
CC
CY62157CV30 Automotive-E –40°C to +125°C 2.7V – 3.3V
CY62157CV33 Automotive-A –40°C to +85°C 3.0V – 3.6V
Automotive-E –40°C to +125°C
Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions
CY62157CV30-70
UnitMin. Typ.
[2]
Max.
V
OH
Output HIGH Voltage I
OH
= –1.0 mA V
CC
= 2.7V 2.4 V
V
OL
Output LOW Voltage I
OL
= 2.1 mA V
CC
= 2.7V 0.4 V
V
IH
Input HIGH Voltage 2.2 V
CC
+ 0.3V V
V
IL
Input LOW Voltage –0.3 0.8 V
I
IX
Input Leakage
Current
GND < V
I
< V
CC
–10 +10 µA
I
OZ
Output Leakage
Current
GND < V
O
< V
CC
, Output Disabled –10 +10 µA
I
CC
V
CC
Operating
Supply
Current
f = f
MAX
= 1/t
RC
V
CC
= 3.3V
I
OUT
= 0 mA
CMOS Levels
715mA
f = 1 MHz 1.5 3
I
SB1
Automatic CE
Power-Down
Current— CMOS
Inputs
CE
1
> V
CC
– 0.2V or CE
2
< 0.2V
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = f
max
(Address and Data Only),
f=0 (OE
, WE, BHE and BLE)
870µA
I
SB2
Automatic CE
Power-Down
Current—CMOS
Inputs
CE
1
> V
CC
– 0.2V or CE
2
< 0.2V
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= 3.3V
870µA
Notes:
5. V
IL(min.)
= –2.0V for pulse durations less than 20 ns.
6. T
A
is the “Instant-On” case temperature.
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