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CY62158EV30 MoBL
®
Document #: 38-05578 Rev. *D Page 3 of 11
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Storage Temperature ..................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground Potential–0.3V to V
CC(max)
+ 0.3V
DC Voltage Applied to Outputs
in High-Z State
[5, 6]
.........................–0.3V to V
CC(max)
+ 0.3V
DC Input Voltage
[5, 6]
..................... –0.3V to V
CC(max)
+ 0.3V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage............................................>2001V
(MIL-STD-883, Method 3015)
Latch up Current......................................................>200 mA
Operating Range
Product Range
Ambient
Temperature
(T
A
)
V
CC
[7]
CY62158EV30LL Industrial –40°C to +85°C 2.2V – 3.6V
Electrical Characteristics (Over the Operating Range)
Parameter Description Test Conditions
45 ns
Unit
Min Typ
[4]
Max
V
OH
Output HIGH Voltage I
OH
= –0.1 mA 2.0 V
I
OH
= –1.0 mA, V
CC
> 2.70V 2.4 V
V
OL
Output LOW Voltage I
OL
= 0.1 mA 0.4 V
I
OL
= 2.1 mA, V
CC
> 2.70V 0.4 V
V
IH
Input HIGH Voltage V
CC
= 2.2V to 2.7V 1.8 V
CC
+ 0.3V V
V
CC
= 2.7V to 3.6V 2.2 V
CC
+ 0.3V V
V
IIL
Input LOW Voltage V
CC
= 2.2V to 2.7V –0.3 0.6 V
V
CC
= 2.7V to 3.6V –0.3 0.8 V
I
IX
Input Leakage Current GND < V
I
< V
CC
–1 +1 µA
I
OZ
Output Leakage Current GND < V
O
< V
CC
, Output Disabled –1 +1 µA
I
CC
V
CC
Operating Supply Current f = f
max
= 1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
18 25 mA
f = 1 MHz 1.8 3 mA
I
SB1
Automatic CE
Power down Current —
CMOS Inputs
CE
1
> V
CC
– 0.2V, CE
2
< 0.2V
V
IN
> V
CC
– 0.2V, V
IN
< 0.2V)
f = f
max
(Address and Data Only),
f = 0 (OE
and WE), V
CC
= 3.60V
28µA
I
SB2
[8]
Automatic CE
Power down Current —
CMOS Inputs
CE
1
> V
CC
– 0.2V or CE
2
< 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= 3.60V
28µA
Capacitance
[9]
Parameter Description Test Conditions Max Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
10 pF
C
OUT
Output Capacitance 10 pF
Notes
5. V
IL(min)
= –2.0V for pulse durations less than 20 ns.
6. V
IH(max)
= V
CC
+ 0.75V for pulse duration less than 20 ns.
7. Full device AC operation assumes a 100 µs ramp time from 0 to V
CC
(min) and 200 µs wait time after V
CC
stabilization.
8. Only chip enables (CE
1
and CE
2
) must be at CMOS level to meet the I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
9. Tested initially and after any design or process changes that may affect these parameters.
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