Filter
Top Products
CY7C1012DV33
Document Number: 38-05610 Rev. *D Page 6 of 11
Data Retention Characteristics
Over the Operating Range
Parameter Description Conditions
[3]
Min Typ Max Unit
V
DR
V
CC
for Data Retention 2 V
I
CCDR
Data Retention Current V
CC
= 2V, CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
25 mA
t
CDR
[11]
Chip Deselect to Data Retention
Time
0ns
t
R
[12]
Operation Recovery Time t
RC
ns
Data Retention Waveform
Switching Waveforms
Figure 3. Read Cycle No. 1
[13, 14]
Figure 4. Read Cycle No. 2 (OE Controlled)
[3, 14, 15]
3.0V3.0V
t
CDR
V
DR
>
2V
DATA RETENTION MODE
t
R
CE
V
CC
PREVIOUS DATA VALID DATA VALID
RC
t
AA
t
OHA
t
RC
ADDRESS
DATA OUT
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
t
HZOE
t
PD
t
HZCE
OE
CE
ADDRESS
DATA OUT
V
CC
SUPPLY
CURRENT
HIGH
IMPEDANCE
I
CC
I
SB
Notes
11. Tested initially and after any design or process changes that may affect these parameters.
12. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min)
> 50 μs or stable at V
CC(min)
> 50 μs.
13. Device is continuously selected. OE
, CE = V
IL
.
14. WE
is HIGH for read cycle.
15. Address valid before or similar to CE
transition LOW.
[+] Feedback