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CY7C1018DV33
Document #: 38-05465 Rev. *D Page 2 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on V
CC
to Relative GND
[2]
... –0.3V to + 4.6V
DC Voltage Applied to Outputs
[2]
in High-Z State .......................................–0.3V to V
CC
+ 0.3V
DC Input Voltage
[2]
................................–0.3V to V
CC
+ 0.3V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage...........................................> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.....................................................> 200 mA
Selection Guide
–10 (Industrial) Unit
Maximum Access Time 10 ns
Maximum Operating Current 60 mA
Maximum Standby Current 3 mA
Operating Range
Range
Ambient
Temperature
V
CC
Speed
Industrial –40°C to +85°C 3.3V ± 0.3V 10 ns
DC Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions
–10 (Industrial)
Unit
Min. Max.
V
OH
Output HIGH Voltage V
CC
= Min.,
I
OH
= –4.0 mA
2.4 V
V
OL
Output LOW Voltage V
CC
= Min.,
I
OL
= 8.0 mA
0.4 V
V
IH
Input HIGH Voltage 2.0 V
CC
+ 0.3 V
V
IL
Input LOW Voltage
[2]
–0.3 0.8 V
I
IX
Input Leakage Current GND < V
I
< V
CC
–1 +1 µA
I
OZ
Output Leakage Current GND < V
I
< V
CC
, Output Disabled –1 +1 µA
I
CC
V
CC
Operating Supply Current V
CC
= Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
100MHz 60 mA
83MHz 55 mA
66MHz 45 mA
40MHz 30 mA
I
SB1
Automatic CE Power-down
Current—TTL Inputs
Max. V
CC
, CE > V
IH
V
IN
> V
IH
or V
IN
< V
IL
, f = f
MAX
10 mA
I
SB2
Automatic CE Power-down
Current—CMOS Inputs
Max. V
CC
, CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V, or V
IN
< 0.3V, f = 0
3mA
Note
2. V
IL
(min.) = –2.0V and V
IH
(max) = V
CC
+ 1V for pulse durations of less than 5 ns.
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