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CY7C1019BN
Document #: 001-06425 Rev. ** Page 4 of 8
Data Retention Characteristics Over the Operating Range (L Version Only)
Parameter Description Conditions Min. Max. Unit
V
DR
V
CC
for Data Retention No input may exceed V
CC
+ 0.5V
V
CC
= V
DR
= 2.0V,
CE
> V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V or V
IN
< 0.3V
2.0 V
I
CCDR
Data Retention Current 300 µA
t
CDR
[3]
Chip Deselect to Data Retention Time 0 ns
t
R
Operation Recovery Time 200 µs
Data Retention Waveform
3.0V3.0V
t
CDR
V
DR
> 2V
DATA RETENTION MODE
t
R
CE
V
CC
Switching Waveforms
Read Cycle No. 1
[9, 10]
Read Cycle No. 2 (OE Controlled)
[10, 11]
Notes:
9. Device is continuously selected. OE
, CE = V
IL
.
10.WE
is HIGH for read cycle.
11.Address valid prior to or coincident with CE
transition LOW.
PREVIOUS DATA VALID DATA VALID
t
RC
t
AA
t
OHA
ADDRESS
DATA OUT
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
t
HZOE
t
HZCE
t
PD
HIGH
OE
CE
ICC
ISB
IMPEDANCE
ADDRESS
DATA OUT
V
CC
SUPPLY
CURRENT
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