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CY7C1019D
Document #: 38-05464 Rev. *E Page 6 of 11
Data Retention Characteristics (Over the Operating Range)
Parameter Description Conditions Min Max Unit
V
DR
V
CC
for Data Retention 2.0 V
I
CCDR
Data Retention Current V
CC
= V
DR
= 2.0V, CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V or V
IN
< 0.3V
3mA
t
CDR
[3]
Chip Deselect to Data Retention Time 0 ns
t
R
[12]
Operation Recovery Time t
RC
ns
Data Retention Waveform
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled)
[13, 14]
Read Cycle No. 2 (OE Controlled)
[14, 15]
4.5V4.5V
t
CDR
V
DR
> 2V
DATA RETENTION MODE
t
R
CE
V
CC
PREVIOUS DATA VALID DATA VALID
RC
t
AA
t
OHA
tRC
ADDRESS
DATA OUT
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
t
HZOE
t
HZCE
t
PD
HIGH
ICC
ISB
IMPEDANCE
OE
CE
ADDRESS
DATA OUT
V
CC
SUPPLY
CURRENT
Notes
12. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min)
> 50 µs or stable at V
CC(min)
> 50 µs.
13. Device is continuously selected. OE
, CE = V
IL
.
14. WE
is HIGH for Read cycle.
15. Address valid prior to or coincident with CE
transition LOW.
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