Cypress CY7C1350G Computer Hardware User Manual


 
CY7C1350G
Document #: 38-05524 Rev. *F Page 9 of 15
Switching Characteristics Over the Operating Range
[17, 18]
–250 –200 –166 –133 –100
Parameter Description Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
t
POWER
V
DD
(typical) to the first Access
[13]
1 1 1 1 1 ms
Clock
t
CYC
Clock Cycle Time 4.0 5.0 6.0 7.5 10 ns
t
CH
Clock HIGH 1.7 2.0 2.5 3.0 3.5 ns
t
CL
Clock LOW 1.7 2.0 2.5 3.0 3.5 ns
Output Times
t
CO
Data Output Valid After CLK Rise 2.6 2.8 3.5 4.0 4.5 ns
t
DOH
Data Output Hold After CLK Rise 1.0 1.0 1.5 1.5 1.5 ns
t
CLZ
Clock to Low-Z
[14, 15, 16]
0 0 0 0 0 ns
t
CHZ
Clock to High-Z
[14, 15, 16]
2.6 2.8 3.5 4.0 4.5 ns
t
OEV
OE LOW to Output Valid 2.6 2.8 3.5 4.0 4.5 ns
t
OELZ
OE LOW to Output Low-Z
[14, 15, 16]
0 0 0 0 0 ns
t
OEHZ
OE HIGH to Output High-Z
[14, 15,
16]
2.6 2.8 3.5 4.0 4.5 ns
Set-up Times
t
AS
Address Set-up Before CLK Rise 1.2 1.2 1.5 1.5 1.5 ns
t
ALS
ADV/LD Set-up Before CLK Rise 1.2 1.2 1.5 1.5 1.5 ns
t
WES
GW, BW
X
Set-Up Before CLK Rise 1.2 1.2 1.5 1.5 1.5 ns
t
CENS
CEN Set-up Before CLK Rise 1.2 1.2 1.5 1.5 1.5 ns
t
DS
Data Input Set-up Before CLK Rise 1.2 1.2 1.5 1.5 1.5 ns
t
CES
Chip Enable Set-Up Before CLK
Rise
1.2 1.2 1.5 1.5 1.5 ns
Hold Times
t
AH
Address Hold After CLK Rise 0.3 0.5 0.5 0.5 0.5 ns
t
ALH
ADV/LD Hold after CLK Rise 0.3 0.5 0.5 0.5 0.5 ns
t
WEH
GW, BW
X
Hold After CLK Rise 0.3 0.5 0.5 0.5 0.5 ns
t
CENH
CEN
Hold After CLK Rise
0.3 0.5 0.5 0.5 0.5 ns
t
DH
Data Input Hold After CLK Rise 0.3 0.5 0.5 0.5 0.5 ns
t
CEH
Chip Enable Hold After CLK Rise 0.3 0.5 0.5 0.5 0.5 ns
Notes:
13.This part has a voltage regulator internally; t
POWER
is the time that the power needs to be supplied above VDD minimum initially before a Read or Write operation
can be initiated.
14.t
CHZ
, t
CLZ
,t
OELZ
, and t
OEHZ
are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
15.At any given voltage and temperature, t
OEHZ
is less than t
OELZ
and t
CHZ
is less than t
CLZ
to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve tri-state prior to Low-Z under the same system conditions.
16.This parameter is sampled and not 100% tested.
17.Timing reference level is 1.5V when V
DDQ
= 3.3V and is 1.25V when V
DDQ
= 2.5V.
18.Test conditions shown in (a) of AC Test Loads unless otherwise noted.
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