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CY7C1354CV25
CY7C1356CV25
Document #: 38-05537 Rev. *H Page 16 of 28
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on V
DD
Relative to GND........ –0.5V to +3.6V
Supply Voltage on V
DDQ
Relative to GND ......–0.5V to +V
DD
DC to Outputs in Tri-State................... –0.5V to V
DDQ
+ 0.5V
DC Input Voltage....................................–0.5V to V
DD
+ 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range Ambient Temperature V
DD
/V
DDQ
Commercial 0°C to +70°C 2.5V ± 5%
Industrial –40°C to +85°C
Electrical Characteristics Over the Operating Range
[14, 15]
Parameter Description Test Conditions Min. Max. Unit
V
DD
Power Supply Voltage 2.375 2.625 V
V
DDQ
I/O Supply Voltage for 2.5V I/O 2.375 V
DD
V
V
OH
Output HIGH Voltage for 2.5V I/O, I
OH
= −1.0 mA 2.0 V
V
OL
Output LOW Voltage for 2.5V I/O, I
OL
= 1.0 mA 0.4 V
V
IH
Input HIGH Voltage for 2.5V I/O 1.7 V
DD
+ 0.3V V
V
IL
Input LOW Voltage
[14]
for 2.5V I/O –0.3 0.7 V
I
X
Input Leakage Current
except ZZ and MODE
GND ≤ V
I
≤ V
DDQ
–5 5 µA
Input Current of MODE Input = V
SS
–30 µA
Input = V
DD
5 µA
Input Current of ZZ Input = V
SS
–5 µA
Input = V
DD
30 µA
I
OZ
Output Leakage Current GND ≤ V
I
≤ V
DDQ,
Output Disabled –5 5 µA
I
DD
V
DD
Operating Supply V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
4-ns cycle, 250 MHz 250 mA
5-ns cycle, 200 MHz 220 mA
6-ns cycle, 166 MHz 180 mA
I
SB1
Automatic CE
Power-down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
≥ V
IH
or V
IN
≤ V
IL
, f = f
MAX
=
1/t
CYC
4-ns cycle, 250 MHz 130 mA
5-ns cycle, 200 MHz 120 mA
6-ns cycle, 166 MHz 110 mA
I
SB2
Automatic CE
Power-down
Current—CMOS Inputs
Max. V
DD
, Device Deselected,
V
IN
≤ 0.3V or V
IN
> V
DDQ
− 0.3V,
f = 0
All speed grades 40 mA
I
SB3
Automatic CE
Power-down
Current—CMOS Inputs
Max. V
DD
, Device Deselected,
V
IN
≤ 0.3V or V
IN
> V
DDQ
− 0.3V,
f = f
MAX
= 1/t
CYC
4-ns cycle, 250 MHz 120 mA
5-ns cycle, 200 MHz 110 mA
6-ns cycle, 166 MHz 100 mA
I
SB4
Automatic CE
Power-down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
≥ V
IH
or V
IN
≤ V
IL
, f = 0
All speed grades 40 mA
Notes:
14.Overshoot: V
IH
(AC) < V
DD
+1.5V (Pulse width less than t
CYC
/2), undershoot: V
IL
(AC)> –2V (Pulse width less than t
CYC
/2).
15.T
Power-up
: Assumes a linear ramp from 0V to V
DD
(min.) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
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