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CY7C1361C
CY7C1363C
Document #: 38-05541 Rev. *F Page 19 of 31
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................–65°C to + 150°C
Ambient Temperature with
Power Applied............................................–55°C to + 125°C
Supply Voltage on V
DD
Relative to GND.......–0.5V to + 4.6V
Supply Voltage on V
DDQ
Relative to GND .....–0.5V to + V
DD
DC Voltage Applied to Outputs
in tri-state ............................................ –0.5V to V
DDQ
+ 0.5V
DC Input Voltage....................................–0.5V to V
DD
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Range
Ambient
Temperature V
DD
V
DDQ
Commercial 0°C to +70°C 3.3V – 5%/+10% 2.5V – 5%
to V
DD
Industrial –40°C to +85°C
Automotive –40°C to +125°C
Electrical Characteristics Over the Operating Range
[13, 14]
Parameter Description Test Conditions Min. Max. Unit
V
DD
Power Supply Voltage 3.135 3.6 V
V
DDQ
I/O Supply Voltage for 3.3V I/O 3.135 V
DD
V
for 2.5V I/O 2.375 2.625 V
V
OH
Output HIGH Voltage for 3.3V I/O, I
OH
= −4.0 mA 2.4 V
for 2.5V I/O, I
OH
= −1.0 mA 2.0 V
V
OL
Output LOW Voltage for 3.3V I/O, I
OL
= 8.0 mA 0.4 V
for 2.5V I/O, I
OL
= 1.0 mA 0.4 V
V
IH
Input HIGH Voltage
[13]
for 3.3V I/O 2.0 V
DD
+ 0.3V V
for 2.5V I/O 1.7 V
DD
+ 0.3V V
V
IL
Input LOW Voltage
[13]
for 3.3V I/O –0.3 0.8 V
for 2.5V I/O –0.3 0.7 V
I
X
Input Leakage Current
except ZZ and MODE
GND ≤ V
I
≤ V
DDQ
–5 5 µA
Input Current of MODE Input = V
SS
–30 µA
Input = V
DD
5 µA
Input Current of ZZ Input = V
SS
–5 µA
Input = V
DD
30 µA
I
OZ
Output Leakage Current GND < V
I
< V
DDQ,
Output Disabled –5 5 µA
I
DD
V
DD
Operating Supply
Current
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
7.5-ns cycle,133 MHz 250 mA
10-ns cycle,100 MHz 180
I
SB1
Automatic CE
Power-down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
> V
IH
or V
IN
< V
IL
, f = f
MAX,
inputs switching
All speeds (Comm/Ind’l) 110 mA
10-ns cycle,100 MHz
(Automotive)
150 mA
I
SB2
Automatic CE
Power-down
Current—CMOS Inputs
Max. V
DD
, Device Deselected,
V
IN
> V
DD
– 0.3V or V
IN
< 0.3V,
f = 0, inputs static
All speeds 40 mA
I
SB3
Automatic CE
Power-down
Current—CMOS Inputs
Max. V
DD
, Device Deselected,
V
IN
> V
DDQ
– 0.3V or V
IN
< 0.3V,
f = f
MAX
, inputs switching
All speeds (Comm/Ind’l) 100 mA
10-ns cycle,100 MHz
(Automotive)
120 mA
I
SB4
Automatic CE
Power-down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
> V
IH
or V
IN
< V
IL
f = 0, inputs static
All speeds (Comm/Ind’l) 40 mA
10-ns cycle,100 MHz
(Automotive)
60 mA
Notes:
13.Overshoot: V
IH
(AC) < V
DD
+1.5V (Pulse width less than t
CYC
/2), undershoot: V
IL
(AC) > –2V (Pulse width less than t
CYC
/2).
14.T
Power-up
: Assumes a linear ramp from 0V to V
DD
(min.) within 200ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
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