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CY7C1386DV25, CY7C1386FV25
CY7C1387DV25, CY7C1387FV25
Document Number: 38-05548 Rev. *E Page 18 of 30
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of
the device. For user guidelines, not tested.
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on V
DD
Relative to GND ....... –0.5V to +3.6V
Supply Voltage on V
DDQ
Relative to GND...... –0.5V to +V
DD
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to V
DDQ
+ 0.5V
DC Input Voltage ................................... –0.5V to V
DD
+ 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current .................................................... >200 mA
Operating Range
Range
Ambient
Temperature
V
DD
V
DDQ
Commercial 0°C to +70°C 2.5V ±5% 2.5V –5%
to V
DD
Industrial –40°C to +85°C
Electrical Characteristics
Over the Operating Range
[17, 18]
Parameter Description Test Conditions Min. Max. Unit
V
DD
Power Supply Voltage 2.375 2.625 V
V
DDQ
IO Supply Voltage for 2.5V IO 2.375 V
DD
V
V
OH
Output HIGH Voltage for 2.5V IO, I
OH
= –1.0 mA 2.0 V
V
OL
Output LOW Voltage for 2.5V IO, I
OL
= 1.0 mA 0.4 V
V
IH
Input HIGH Voltage
[17]
for 2.5V IO 1.7 V
DD
+ 0.3V V
V
IL
Input LOW Voltage
[17]
for 2.5V IO –0.3 0.7 V
I
X
Input Leakage Current
except ZZ and MODE
GND ≤ V
I
≤ V
DDQ
–5 5 µA
Input Current of MODE Input = V
SS
–30 µA
Input = V
DD
5 µA
Input Current of ZZ Input = V
SS
–5 µA
Input = V
DD
30 µA
I
OZ
Output Leakage Current GND ≤ V
I
≤ V
DDQ,
Output Disabled –5 5 µA
I
DD
V
DD
Operating Supply
Current
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
4.0-ns cycle, 250 MHz 350 mA
5-ns cycle, 200 MHz 300 mA
6-ns cycle, 167 MHz 275 mA
I
SB1
Automatic CE
Power Down
Current—TTL Inputs
V
DD
= Max, Device Deselected,
V
IN
≥ V
IH
or V
IN
≤ V
IL
f = f
MAX
= 1/t
CYC
4.0-ns cycle, 250 MHz 160 mA
5-ns cycle, 200 MHz 150 mA
6-ns cycle, 167 MHz 140 mA
I
SB2
Automatic CE
Power Down
Current—CMOS Inputs
V
DD
= Max, Device Deselected,
V
IN
≤ 0.3V or V
IN
> V
DDQ
– 0.3V,
f = 0
All speeds 70 mA
I
SB3
Automatic CE
Power Down
Current—CMOS Inputs
V
DD
= Max, Device Deselected,
or V
IN
≤ 0.3V or V
IN
> V
DDQ
– 0.3V
f = f
MAX
= 1/t
CYC
4.0-ns cycle, 250 MHz 135 mA
5-ns cycle, 200 MHz 130 mA
6-ns cycle, 167 MHz 125 mA
I
SB4
Automatic CE
Power Down
Current—TTL Inputs
V
DD
= Max, Device Deselected,
V
IN
≥ V
IH
or V
IN
≤ V
IL
, f = 0
All Speeds 80 mA
Notes
17.Overshoot: V
IH
(AC) < V
DD
+1.5V (pulse width less than t
CYC
/2), undershoot: V
IL
(AC) > –2V (pulse width less than t
CYC
/2).
18.T
power up
: assumes a linear ramp from 0V to V
DD
(min.) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD.
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