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CY7C1386DV25, CY7C1386FV25
CY7C1387DV25, CY7C1387FV25
Document Number: 38-05548 Rev. *E Page 20 of 30
Switching Characteristics
Over the Operating Range
[20, 21]
Parameter Description
250 MHz 200 MHz 167 MHz
Unit
Min. Max. Min. Max. Min. Max.
t
POWER
V
DD
(Typical) to the first Access
[22]
1 11ms
Clock
t
CYC
Clock Cycle Time 4.0 5.0 6.0 ns
t
CH
Clock HIGH 1.7 2.0 2.2 ns
t
CL
Clock LOW 1.7 2.0 2.2 ns
Output Times
t
CO
Data Output Valid After CLK Rise 2.6 3.0 3.4 ns
t
DOH
Data Output Hold After CLK Rise 1.0 1.3 1.3 ns
t
CLZ
Clock to Low-Z
[23, 24, 25]
1.0 1.3 1.3 ns
t
CHZ
Clock to High-Z
[23, 24, 25]
2.6 3.0 3.4 ns
t
OEV
OE LOW to Output Valid 2.6 3.0 3.4 ns
t
OELZ
OE LOW to Output Low-Z
[23, 24, 25]
0 0 0 ns
t
OEHZ
OE HIGH to Output High-Z
[23, 24, 25]
2.6 3.0 3.4 ns
Setup Times
t
AS
Address Setup Before CLK Rise 1.2 1.4 1.5 ns
t
ADS
ADSC, ADSP Setup Before CLK Rise 1.2 1.4 1.5 ns
t
ADVS
ADV Setup Before CLK Rise 1.2 1.4 1.5 ns
t
WES
GW, BWE, BW
X
Setup Before CLK Rise 1.2 1.4 1.5 ns
t
DS
Data Input Setup Before CLK Rise 1.2 1.4 1.5 ns
t
CES
Chip Enable SetUp Before CLK Rise 1.2 1.4 1.5 ns
Hold Times
t
AH
Address Hold After CLK Rise 0.3 0.4 0.5 ns
t
ADH
ADSP, ADSC Hold After CLK Rise 0.3 0.4 0.5 ns
t
ADVH
ADV Hold After CLK Rise 0.3 0.4 0.5 ns
t
WEH
GW, BWE, BW
X
Hold After CLK Rise 0.3 0.4 0.5 ns
t
DH
Data Input Hold After CLK Rise 0.3 0.4 0.5 ns
t
CEH
Chip Enable Hold After CLK Rise 0.3 0.4 0.5 ns
Notes
20.Timing reference level is 1.25V when V
DDQ
= 2.5V.
21.Test conditions shown in (a) of AC Test Loads unless otherwise noted.
22.This part has a voltage regulator internally; t
POWER
is the time that the power needs to be supplied above V
DD
(minimum) initially before a read or write operation
can be initiated.
23.t
CHZ
, t
CLZ
,t
OELZ
, and t
OEHZ
are specified with AC test conditions shown in part (b) of AC Test Loads and Waveforms on page 19. Transition is measured ± 200
mV from steady-state voltage.
24.At any given voltage and temperature, t
OEHZ
is less than t
OELZ
and t
CHZ
is less than t
CLZ
to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.
25.This parameter is sampled and not 100% tested.
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