Document #: 001-07162 Rev. *C Revised May 22, 2008 Page 30 of 30
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CY7C1392CV18, CY7C1992CV18
CY7C1393CV18, CY7C1394CV18
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Document History Page
Document Title: CY7C1392CV18/CY7C1992CV18/CY7C1393CV18/CY7C1394CV18, 18-Mbit DDR-II SIO SRAM 2-Word
Burst Architecture
Document Number: 001-07162
Rev. ECN No.
Submission
Date
Orig. of
Change
Description of Change
** 433284 See ECN NXR New data sheet
*A 462615 See ECN NXR Changed t
CYC
from 100 ns to 50 ns, changed t
TH
and t
TL
from 40 ns to 20 ns, changed
t
TMSS
, t
TDIS
, t
CS
, t
TMSH
, t
TDIH
, t
CH
from
10 ns to 5 ns and changed t
TDOV
from 20 ns
to 10 ns in TAP AC Switching Characteristics table
Modified Power-Up waveform
*B 1523386 See ECN VKN/AESA Converted from preliminary to final, Updated Logic Block diagram, Updated I
DD
/I
SB
specs, Changed DLL minimum operating frequency from 80MHz to 120MHz, Changed
t
CYC
max spec to 8.4ns for all speed bins, Modified footnotes 20 and 28.
*C 2507766 05/23/08 VKN/PYRS Changed Ambient Temperature with Power Applied from “–10°C to +85°C” to “–55°C
to +125°C” in the “Maximum Ratings“ on page 20, Updated power up sequence
waveform and its description, Added footnote #19 related to I
DD
,
Changed Θ
JA
spec
from 28.51 to 18.7, Changed Θ
JC
spec from 5.91 to 4.5, Changed JTAG ID [31:29]
from 001 to 000.
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