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CY7C1471BV25
CY7C1473BV25, CY7C1475BV25
Document #: 001-15013 Rev. *E Page 22 of 30
Switching Characteristics
Over the Operating Range. Timing reference level is 1.25V when V
DDQ
= 2.5V. Test conditions shown in (a) of “AC Test Loads and
Waveforms” on page 21 unless otherwise noted.
Parameter Description
133 MHz 100 MHz
Unit
Min Max Min Max
t
POWER
11ms
Clock
t
CYC
Clock Cycle Time 7.5 10 ns
t
CH
Clock HIGH 2.5 3.0 ns
t
CL
Clock LOW 2.5 3.0 ns
Output Times
t
CDV
Data Output Valid After CLK Rise 6.5 8.5 ns
t
DOH
Data Output Hold After CLK Rise 2.5 2.5 ns
t
CLZ
Clock to Low-Z
[16, 17, 18]
3.0 3.0 ns
t
CHZ
Clock to High-Z
[16, 17, 18]
3.8 4.5 ns
t
OEV
OE LOW to Output Valid 3.0 3.8 ns
t
OELZ
OE LOW to Output Low-Z
[16, 17, 18]
00ns
t
OEHZ
OE HIGH to Output High-Z
[16, 17, 18]
3.0 4.0 ns
Setup Times
t
AS
Address Setup Before CLK Rise 1.5 1.5 ns
t
ALS
ADV/LD Setup Before CLK Rise 1.5 1.5 ns
t
WES
WE, BW
X
Setup Before CLK Rise 1.5 1.5 ns
t
CENS
CEN
Setup Before CLK Rise 1.5 1.5 ns
t
DS
Data Input Setup Before CLK Rise 1.5 1.5 ns
t
CES
Chip Enable Setup Before CLK Rise 1.5 1.5 ns
Hold Times
t
AH
Address Hold After CLK Rise 0.5 0.5 ns
t
ALH
ADV/LD Hold After CLK Rise 0.5 0.5 ns
t
WEH
WE, BW
X
Hold After CLK Rise 0.5 0.5 ns
t
CENH
CEN Hold After CLK Rise 0.5 0.5 ns
t
DH
Data Input Hold After CLK Rise 0.5 0.5 ns
t
CEH
Chip Enable Hold After CLK Rise 0.5 0.5 ns
Notes
15.This part has a voltage regulator internally; t
POWER
is the time that the power is supplied above V
DD
(minimum) initially, before a read or write operation can be initiated.
16.t
CHZ
, t
CLZ
,t
OELZ
, and t
OEHZ
are specified with AC test conditions shown in part (b) of “AC Test Loads and Waveforms” on page 21. Transition is measured ±200 mV
from steady-state voltage.
17.At any supplied voltage and temperature, t
OEHZ
is less than t
OELZ
and t
CHZ
is less than t
CLZ
to eliminate bus contention between SRAMs when sharing the same data
bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve
High-Z before Low-Z under the same system conditions.
18.This parameter is sampled and not 100% tested.
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