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2N4123
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage* I
C
= 1.0 mA, I
B
= 0 30 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 10
µ
A, I
E
= 0 40 V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
µ
A, I
C
= 0
5.0 V
I
CBO
Collector Cutoff Current V
CB
= 20 V, I
E
= 0 50 nA
I
EBO
Emitter Cutoff Current V
EB
= 3.0 V, I
C
= 0 50 nA
ON CHARACTERISTICS*
h
FE
DC Current Gain V
CE
= 1.0 V, I
C
= 2.0 mA
V
CE
= 1.0 V, I
C
= 50 mA
50
25
150
V
CE
(sat)
Collector-Emitter Saturation Voltage I
C
= 50 mA, I
B
= 5.0 mA 0.3 V
V
BE
(sat)
Base-Emitter Saturation Voltage I
C
= 50 mA, I
B
= 5.0 mA 0.95 V
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance V
CB
= 5.0 V, f = 100 kHz 4.0 pF
C
ib
Input Capacitance V
EB
= 0.5 V, f = 0.1 MHz 8.0 pF
h
fe
Small-Signal Current Gain I
C
= 2.0 mA, V
CE
= 10 V,
f = 1.0 kHz
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
50
2.5
200
f
T
Current Gain - Bandwidth Product I
C
= 10 mA, V
CE
= 20 V
f = 100 MHz
250 MHz
NF Noise Figure V
CE
= 5.0 V, I
C
= 100 µA,
R
S
= 1.0 kΩ,
B
W
= 10 Hz to 15.7 kHz
6.0 dB
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%