Panasonic 2SA1309A Network Card User Manual


 
Transistors
1
Publication date: March 2003 SJC00016BED
2SA1309A
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC3311A
Features
High forward current transfer ratio h
FE
Allowing supply with the radial taping
Optimum for high-density mounting
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
60 V
Collector-emitter voltage (Base open) V
CEO
50 V
Emitter-base voltage (Collector open) V
EBO
7V
Collector current I
C
100 mA
Peak collector current I
CP
200 mA
Collector power dissipation P
C
300 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 0 60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 2 mA, I
B
= 0 50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 0 7V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0 100 nA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 10 V, I
B
= 0 1 µA
Forward current transfer ratio
*
h
FE
V
CE
= 10 V, I
C
= 2 mA 160 460
Collector-emitter saturation voltage V
CE(sat)
I
C
= 50 mA, I
B
= 5 mA 0.3 V
Transition frequency f
T
V
CB
= 10 V, I
E
= 1 mA, f = 200 MHz 80 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 3.5 pF
(Common base, input open circuited)
Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
4.0±0.2
0.75 max.
2.0
±0.2
0.45
(2.5) (2.5)
0.7
±0.1
231
+0.20
–0.10
0.45
+0.20
–0.10
7.6
3.0
±0.2
(0.8)(0.8)
15.6
±0.5
1: Emitter
2: Collector
3: Base
NS-B1 Package
Rank Q R S No rank
h
FE
160 to 260 210 to 340 290 to 460 160 to 460
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).