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Publication date: March 2003 SJC00016BED
2SA1309A
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC3311A
■ Features
• High forward current transfer ratio h
FE
• Allowing supply with the radial taping
• Optimum for high-density mounting
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−60 V
Collector-emitter voltage (Base open) V
CEO
−50 V
Emitter-base voltage (Collector open) V
EBO
−7V
Collector current I
C
−100 mA
Peak collector current I
CP
−200 mA
Collector power dissipation P
C
300 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −10 µA, I
E
= 0 −60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −2 mA, I
B
= 0 −50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −7V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −10 V, I
E
= 0 −100 nA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= −10 V, I
B
= 0 −1 µA
Forward current transfer ratio
*
h
FE
V
CE
= −10 V, I
C
= −2 mA 160 460
Collector-emitter saturation voltage V
CE(sat)
I
C
= −50 mA, I
B
= −5 mA − 0.3 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 1 mA, f = 200 MHz 80 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 3.5 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
4.0±0.2
0.75 max.
2.0
±0.2
0.45
(2.5) (2.5)
0.7
±0.1
231
+0.20
–0.10
0.45
+0.20
–0.10
7.6
3.0
±0.2
(0.8)(0.8)
15.6
±0.5
1: Emitter
2: Collector
3: Base
NS-B1 Package
Rank Q R S No rank
h
FE
160 to 260 210 to 340 290 to 460 160 to 460
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).