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Publication date: July 2007 SJC00346BED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1532G
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC3930G
■ Features
• High transition frequency f
T
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−30 V
Collector-emitter voltage (Base open) V
CEO
−20 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−30 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Base-emitter saturation voltage V
BE
V
CE
= −10 µA, I
C
= −1 mA − 0.7 V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −10 V, I
E
= 0 − 0.1 µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= −20 V, I
B
= 0 −100 µA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= −5 V, I
C
= 0 −10 µA
Forward current transfer ratio
*
h
FE
V
CE
= −10 V, I
C
= 1 mA 70 220
Collector-emitter saturation voltage V
CE(sat)
I
C
= −10 mA, I
B
= −1 mA − 0.1 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 1 mA, f = 200 MHz 150 300 MHz
Noise figure NF V
CB
= −10 V, I
E
= 1 mA, f = 5 MHz 2.8 4.0 dB
Reverse transfer impedance Z
rb
V
CB
= −10 V, I
E
= 1 mA, f = 2 MHz 22 60 Ω
Common-emitter reverse transfer capacitance
C
re
V
CB
= −10 V, I
E
= 1 mA, f = 10.7 MHz 1.2 2.0 pF
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank B C
h
FE
70 to 140 110 to 220
■ Package
• Code
SMini3-F2
• Marking Symbol: E
• Pin Name
1.Base
2.Emitter
3.Collector