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Publication date: January 2003 SJC00286AED
2SA2084
Silicon PNP epitaxial planar type
For general amplification
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= −100 µA, I
B
= 0 −300 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −1 µA, , I
C
= 0 −5V
Forward current transfer ratio
*
h
FE
V
CE
= −10 V, I
C
= −5 mA 30 150
Collector-emitter saturation voltage V
CE(sat)
I
C
= −10 mA, I
B
= −1 mA − 0.6 V
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 7 pF
(Common base, input open circuited)
Transition frequency f
T
V
CB
= −10 V, I
E
= 10 mA, f = 200 MHz 50 MHz
Marking Symbol: 7N
0.40
+0.10
–0.05
(0.65)
1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1
1.1
+0.2
–0.1
1.1
+0.3
–0.1
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−300 V
Collector-emitter voltage (Base open) V
CEO
−300 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−70 mA
Peak collector current I
CP
−100 mA
Collector power dissipation P
C
200 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank P Q
h
FE
30 to 100 60 to 150
This product complies with the RoHS Directive (EU 2002/95/EC).