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Publication date : May 2007 SJC00384AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2162G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6036G
Features
Low collector-emitter saturation voltage V
CE(sat)
SSS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
–15 V
Collector-emitter voltage (Base open) V
CEO
–12 V
Emitter-base voltage (Collector open) V
EBO
–5 V
Collector current I
C
–500 mA
Peak collector current I
CP
–1 A
Collector power dissipation P
C
100 mW
Junction temperature T
j
125
°C
Storage temperature T
stg
–55 to +125
°C
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= –10 mA, I
E
= 0 –15 V
Collector-emitter voltage (Base open) V
CEO
I
C
= –1 mA, I
B
= 0 –12 V
Emitter-base voltage (Collector open)
V
EBO
I
E
= –10 mA, I
C
= 0 –5 V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= –10 V, I
E
= 0 – 0.1
mA
Forward current transfer ratio h
FE
V
CE
= –2 V, I
C
= –10 mA 270 680
Collector-emitter saturation voltage V
CE(sat)
I
C
= –200 mA, I
B
= –10 mA –250 mV
Transition frequency f
T
V
CB
= –2 V, I
E
= 10 mA, f = 200 MHz 200 MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= –10 V, f = 1 MHz 4.5 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
SSSMini3-F2
Marking Symbol: 2U
Pin Name
1. Base
2. Emitter
3. Collector