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Publication date: April 2007 SJC00352AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1218G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD1819G
■ Features
• High forward current transfer ratio h
FE
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−45 V
Collector-emitter voltage (Base open) V
CEO
−45 V
Emitter-base voltage (Collector open) V
EBO
−7V
Collector current I
C
−100 mA
Peak collector current I
CP
−200 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −10 µA, I
E
= 0 −45 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −2 mA, I
B
= 0 −45 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −7V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −20 V, I
E
= 0 − 0.1 µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= −10 V, I
B
= 0 −100 µA
Forward current transfer ratio
*
h
FE
V
CE
= −10 V, I
C
= −2 mA 160 460
Collector-emitter saturation voltage V
CE(sat)
I
C
= −100 mA, I
B
= −10 mA − 0.3 − 0.5 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 1 mA, f = 200 MHz 80 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 2.7 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank Q R S No-rank
h
FE
160 to 260 210 to 340 290 to 460 160 to 460
Marking symbol BQ BR BS B
Product of no-rank is not classified and have no marking symbol for rank.
■ Package
• Code
SMini3-F2
• Marking Symbol: B
• Pin Name
1.Base
2.Emitter
3.Collector