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Publication date: June 2007 SJC00087CED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1462J
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD2216J
■ Features
• High forward current transfer ratio h
FE
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−60 V
Collector-emitter voltage (Base open) V
CEO
−50 V
Emitter-base voltage (Collector open) V
EBO
−7V
Collector current I
C
−100 mA
Peak collector current I
CP
−200 mA
Collector power dissipation P
C
125 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −10 µA, I
E
= 0 −60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −100 µA, I
B
= 0 −50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −7V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −20 V, I
E
= 0 − 0.1 µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= −10 V, I
E
= 0 −100 µA
Forward current transfer ratio h
FE
V
CE
= −10 V, I
C
= −2 mA 160 460
Collector-emitter saturation voltage
*
1
V
CE(sat)
I
C
= −100 mA, I
B
= −10 mA − 0.3 − 0.5 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 1 mA, f = 200 MHz 80 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 2.7 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.27
±0.02
3
12
0.12
+0.03
–0.01
0.80
±0.05
(0.80)
0.85
1.60
±0.05
0 to 0.02
0.10 max.
0.70
+0.05
–0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00
±0.05
(0.50)(0.50)
+0.05
–0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Unit: mm
Marking Symbol: A