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Publication date: March 2003 SJC00101BED
2SC1318A
Silicon NPN epitaxial planar type
For low-frequency driver amplification
Complementary to 2SA0720A
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Optimum for the driver stage of a low-frequency and 25 W to 30
W output amplifier
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
80 V
Collector-emitter voltage (Base open) V
CEO
70 V
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
0.5 A
Peak collector current I
CP
1A
Collector power dissipation P
C
750 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 080V
Collector-emitter voltage (Base open) V
CEO
I
C
= 2 mA, I
B
= 070V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 05V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 20 V, I
E
= 0 0.1 µA
Forward current transfer ratio
*
1
h
FE1
*
2
V
CE
= 10 V, I
C
= 150 mA 85 340
h
FE2
V
CE
= 10 V, I
C
= 500 mA 40
Collector-emitter saturation voltage V
CE(sat)
I
C
= 300 mA, I
B
= 30 mA 0.2 0.6 V
Base-emitter saturation voltage V
BE(sat)
I
C
= 300 mA, I
B
= 30 mA 0.85 1.50 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz 120 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 11 20 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
5.0
±0.2
0.7
±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0
±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Rank Q R S
h
FE1
85 to 170 120 to 240 170 to 340
This product complies with the RoHS Directive (EU 2002/95/EC).