Panasonic MA2J1150G Network Card User Manual


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Switching Diodes
1
Publication date: November 2007 SKF00094AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2J1150G
Silicon epitaxial planar type
For small power current rectification
■ Features
• S-mini type package, allowing high-density mounting
• High reverse voltage V
R
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 200 mA 1.2 V
Reverse current I
R
V
R
= 200 V 200 nA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 4.5 pF
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter Symbol Rating Unit
Reverse voltage V
R
200 V
Maximum peak reverse voltage V
RM
200 V
Output current I
O
200 mA
Repetitive peak forward current I
FRM
600 µA
Non-repetitive peak forward I
FSM
1A
surge current
*
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note)
*
: t = l s
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 3 MHz.
■ Package
•
Code
SMini2-F3
•
Pin Name
1: Anode
2: Cathode
■ Marking Symbol: 1F
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