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Schottky Barrier Diodes (SBD)
1
Publication date: October 2007 SKH00171AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2J7280G
Silicon epitaxial planar type
For super high speed switching
For wave detection
■ Features
•
Low forward voltage V
F
and good wave detection efficiency η
•
Small reverse current I
R
•
Small temperature coefficient of forward characteristic
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
30 V
Maximum peak reverse voltage
V
RM
30 V
Forward current I
F
30 mA
Peak forward current I
FM
150 mA
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F1
I
F
= 1 mA 0.4 V
V
F2
I
F
= 30 mA 1.0
Reverse current I
R
V
R
= 30 V 300 nA
Terminal capacitance C
t
V
R
= 1 V, f = 1 MHz 1.5 pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 10 mA 1.0 ns
I
rr
= 1 mA, R
L
= 100 Ω
Detection efficiency η V
IN
= 3 V
(peak)
, f = 30 MHz 65 %
R
L
= 3.9 kΩ, C
L
= 10 pF
■ Electrical Characteristics T
a
= 25°C ± 3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4.
*
: t
rr
measurement circuit
■ Package
•
Code
SMini2-F3
•
Pin Name
1: Anode
2: Cathode
■ Marking Symbol: 2A