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UP05C8GF
2 SJJ00352BED
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics T
a
= 25°C±3°C
Tr
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 100 mA, I
E
= 0 30 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 mA, I
C
= 0 3 V
Base-emitter voltage V
BE
V
CE
= 10 V, I
C
= 2 mA 720 mV
Forward current transfer ratio h
FE
V
CE
= 10 V, I
C
= 2 mA 100 250
Transition frequency
*
f
T
V
CB
= 10 V, I
E
= -15 mA, f = 200 MHz 1
300 MHz
Power gain PG V
CB
= 10 V, I
E
= -1 mA, f = 100 MHz 20 dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Pulse measurement
CCD Load Device
Parameter Symbol Conditions Min Typ Max Unit
Pinchi off current I
P
V
DS
= 10 V, V
G
= 0 3.8 5.2 mA
Output impedance Z
O
V
DS
= 10 V, V
G
= 0 0.05 MW
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.