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Philips Semiconductors Product specification
TOPFET high side switch BUK214-50Y
SMD version of BUK209-50Y
STATIC CHARACTERISTICS
Limits are at -40˚C ≤ T
mb
≤ 150˚C and typicals at T
mb
= 25 ˚C unless otherwise stated.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Clamping voltages
V
BG
Battery to ground I
G
= 1 mA 50 55 65 V
V
BL
Battery to load I
L
= I
G
= 1 mA 50 55 65 V
-V
LG
Negative load to ground I
L
= 10 mA 18 23 28 V
-V
LG
Negative load voltage
1
I
L
= 5 A; t
p
= 300 µs202530V
Supply voltage battery to ground
V
BG
Operating range
2
5.5 - 35 V
Currents 9 V ≤ V
BG
≤ 16 V
I
B
Quiescent current
3
V
LG
= 0 V - - 20 µA
T
mb
= 25˚C - 0.1 2 µA
I
L
Off-state load current
4
V
BL
= V
BG
--20µA
T
mb
= 25˚C - 0.1 1 µA
I
G
Operating current
5
I
L
= 0 A - 2 4 mA
I
L
Nominal load current
6
V
BL
= 0.5 V T
mb
= 85˚C 6 - - A
Resistances V
BG
I
L
t
p
7
T
mb
R
ON
On-state resistance 9 to 35 V 5 A 300 µs 25˚C - 45 60 mΩ
150˚C - - 120 mΩ
R
ON
On-state resistance 6 V 5 A 300 µs 25˚C - 55 75 mΩ
150˚C - - 150 mΩ
R
G
Internal ground resistance I
G
= 10 mA 95 150 190 Ω
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4 The measured current is in the load pin only.
5 This is the continuous current drawn from the supply with no load connected, but with the input high.
6 Defined as in ISO 10483-1. For comparison purposes only. This parameter will not be characterised for automotive PPAP.
7 The supply and input voltage for the R
ON
tests are continuous. The specified pulse duration t
p
refers only to the applied load current.
September 2002 3 Rev 2.000