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CY7C1318CV18
CY7C1320CV18
Document Number: 001-07160 Rev. *F Page 18 of 26
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with Power Applied.. –55°C to +125°C
Supply Voltage on V
DD
Relative to GND........–0.5V to +2.9V
Supply Voltage on V
DDQ
Relative to GND.......–0.5V to +V
DD
DC Applied to Outputs in High-Z.........–0.5V to V
DDQ
+ 0.3V
DC Input Voltage
[11]
...............................–0.5V to V
DD
+ 0.3V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage (MIL-STD-883, M 3015).... >2001V
Latch up Current..................................................... >200 mA
Operating Range
Range
Ambient
Temperature (T
A
) V
DD
[15]
V
DDQ
[15]
Commercial 0°C to +70°C 1.8 ± 0.1V 1.4V to
V
DD
Industrial –40°C to +85°C
Neutron Soft Error Immunity
Parameter Description
Test
Conditions
Typ Max* Unit
LSBU Logical
Single-Bit
Upsets
25°C 320 368 FIT/
Mb
LMBU Logical
Multi-Bit
Upsets
25°C 0 0.01 FIT/
Mb
SEL Single Event
Latch up
85°C 0 0.1 FIT/
Dev
* No LMBU or SEL events occurred during testing; this column represents a
statistical χ
2
, 95% confidence limit calculation. For more details refer to Appli-
cation Note AN 54908 “Accelerated Neutron SER Testing and Calculation of
Terrestrial Failure Rates”
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
[12]
Parameter Description Test Conditions Min Typ Max Unit
V
DD
Power Supply Voltage 1.7 1.8 1.9 V
V
DDQ
I/O Supply Voltage 1.4 1.5 V
DD
V
V
OH
Output HIGH Voltage Note 16 V
DDQ
/2 – 0.12 V
DDQ
/2 + 0.12 V
V
OL
Output LOW Voltage Note 17 V
DDQ
/2 – 0.12 V
DDQ
/2 + 0.12 V
V
OH(LOW)
Output HIGH Voltage I
OH
= −0.1 mA, Nominal Impedance V
DDQ
– 0.2 V
DDQ
V
V
OL(LOW)
Output LOW Voltage I
OL
= 0.1 mA, Nominal Impedance V
SS
0.2 V
V
IH
Input HIGH Voltage V
REF
+ 0.1 V
DDQ
+ 0.3 V
V
IL
Input LOW Voltage –0.3 V
REF
– 0.1 V
I
X
Input Leakage Current GND ≤ V
I
≤ V
DDQ
−5 5 μA
I
OZ
Output Leakage Current GND ≤ V
I
≤ V
DDQ,
Output Disabled −5 5 μA
V
REF
Input Reference Voltage
[18]
Typical Value = 0.75V 0.68 0.75 0.95 V
I
DD
[19]
V
DD
Operating Supply V
DD
= Max,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
267 MHz (x18) 805 mA
(x36) 855
250 MHz (x18) 730
(x36) 775
200 MHz (x18) 600
(x36) 635
167 MHz (x18) 510
(x36) 540
Notes
15.Power up: assumes a linear ramp from 0V to V
DD
(min) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
16.Outputs are impedance controlled. I
OH
= –(V
DDQ
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
17.Outputs are impedance controlled. I
OL
= (V
DDQ
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
18.V
REF
(min) = 0.68V or 0.46V
DDQ
, whichever is larger, V
REF
(max) = 0.95V or 0.54V
DDQ
, whichever is smaller.
19.The operation current is calculated with 50% read cycle and 50% write cycle.
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