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CY2048WAF
Document #: 38-07738 Rev. *A Page 3 of 7
Absolute Maximum Conditions
(Above which the useful life may be impaired.
For user guidelines, not tested.)
Supply Voltage (V
DD
)........................................–0.5 to +7.0V
DC Input Voltage......................................–0.5V to V
DD
+ 0.5
Output Short Circuit Current.....................................± 50 mA
Storage Temperature (Non-condensing) .... –55°C to +125°C
Junction Temperature................................ –40°C to +125°C
Data Retention @ Tj = 125°C................................> 10 years
ESD (Human Body Model) MIL-STD-883.................> 2000V
Note:
1. Not 100% tested.
Crystal Specifications
[1]
Parameter Description Comments Min. Typ. Max. Unit
F
NOM
Nominal crystal frequency Fundamental mode, AT cut 10 – 48 MHz
R
1
Equivalent series resistance (ESR) Fundamental mode – – 40 Ω
R
3
/R
1
Ratio of third overtone mode ESR to
fundamental mode ESR
Ratio used because typical R
1
values are
much less than the maximum spec
4.5 – – –
C
0
Crystal shunt capacitance – – 5 pF
C
1
Crystal motional capacitance 2 – – fF
Operating Conditions
Parameter Description Min. Typ. Max. Unit
V
DD
Operating Voltage 2.7 – 3.6 V
T
J
Junction Temperature –40 – 125 °C
C
XIN
Capacitance XIN, all tuning caps OFF – 10 – pF
C
XOUT
Capacitance XOUT, all tuning caps OFF – 10 – pF
C
L
All tuning Caps OFF 4 5 6 pF
All tuning Caps ON 9.2 10 11.4 pF
C
OUT
Output Load Capacitance – – 15 pF
t
RAMP
Power-up time for V
DD
to reach minimum specified
voltage (power ramps must be monotonic)
0.05 – 500 ms
T
S
Start up time, 90% V
DD
to valid frequency on output – – 10 ms
DC Electrical Specifications TJ = –40 to 125°C over the operating range
Parameter Description Condition Min. Typ. Max. Unit
V
IL
Input Low Voltage CMOS Levels – – 20 %VDD
V
IH
Input High Voltage CMOS Levels 80 – – %VDD
V
OL
Output Low Voltage V
DD
= 2.7V–3.6V, I
OL
= 8 mA – – 0.4 V
V
OH
Output High Voltage V
DD
= 2.7V–3.6V, I
OL
= –8 mA V
DD
–0.4 – – V
I
IL
Input Low Current Input = V
SS
–110µA
I
IH
Input High Current Input = V
DD
–110µA
I
OZL
Output Leakage Current Output = V
SS
–110µA
I
OZH
Output Leakage Current Output = V
DD
––50µA
I
DD
Power Supply Current No Load, V
DD
= 3.3V, 48 MHz – – 20 mA
I
PD
Power Down Current PD# = 0V – – 25 µA
R
UP
Input Pull-up resistor V
IN
= V
SS
136MΩ
V
IN
> = 0.8V
DD
80 120 150 kΩ
R
DN
Output Pull-down resistor V
IN
= 0.5V
DD
500 900 1500 kΩ
C
IN
Input Pin Capacitance PD#/OE pin – – 7 pF
R
F
Crystal Feedback R XIN = 0 300 – 800 kΩ
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