CY62137FV30 MoBL
®
Document Number: 001-07141 Rev. *F Page 4 of 12
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Parameter Description Test Conditions VFBGA TSOP II Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Still air, soldered on a 3 × 4.5 inch,
two layer printed circuit board
75 77 °C/W
Θ
JC
Thermal Resistance
(Junction to Case)
10 13 °C/W
AC Test Loads and Waveforms
Figure 3. AC Test Loads and Waveform
Parameters 2.5V (2.2V to 2.7V) 3.0V (2.7V to 3.6V) Unit
R1 16667 1103 Ω
R2 15385 1554 Ω
R
TH
8000 645 Ω
V
TH
1.20 1.75 V
Data Retention Characteristics
Over the Operating Range
Parameter Description Conditions Min Typ
[1]
Max Unit
V
DR
V
CC
for Data Retention 1.5 V
I
CCDR
[7]
Data Retention Current V
CC
= 1.5V, CE > V
CC
- 0.2V,
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
Ind’l/Auto-A 4 μA
Auto-E 12
t
CDR
[8]
Chip Deselect to Data Retention Time 0 ns
t
R
[9]
Operation Recovery Time t
RC
ns
Data Retention Waveform
Figure 4. Data Retention Waveform
[10]
V
CC
V
CC
OUTPUT
R2
30 pF
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT
Equivalent to: THÉVENIN EQUIVALENT
ALL INPUT PULSES
R
TH
R1
V
INCLUDING
JIG AND
SCOPE
V
CC(min)
V
CC(min)
t
CDR
V
DR
> 1.5V
DATA RETENTION MODE
t
R
V
CC
CE or
BHE
.BLE
Notes
8. Tested initially and after any design or process changes that may affect these parameters.
9. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min)
> 100 μs or stable at V
CC(min)
> 100 μs.
10.BHE
.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE.
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