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CY62146DV30
Document #: 38-05339 Rev. *A Page 3 of 11
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground
Potential......................................–0.3V to + V
CC(MAX)
+ 0.3V
DC Voltage Applied to Outputs
in High-Z State
[6, 7]
.........................–0.3V to V
CC(MAX)
+ 0.3V
DC Input Voltage
[6, 7]
.....................–0.3V to V
CC(MAX)
+ 0.3V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current......................................................>200 mA
Operating Range
Device Range
Ambient Tem-
perature (T
A
)V
CC
[8]
CY62146DV30L Industrial –40°C to +85°C 2.20V to 3.60V
CY62146DV30LL
Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions
CY62146DV30-45 CY62146DV30-55 CY62146DV30-70
UnitMin. Typ.
[5]
Max. Min. Typ.
[5]
Max. Min. Typ.
[5]
Max.
V
OH
Output HIGH
Voltage
I
OH
= –0.1 mA V
CC
= 2.20V 2.0 2.0 2.0 V
I
OH
= –1.0 mA V
CC
= 2.70V 2.4 2.4 2.4 V
V
OL
Output LOW
Voltage
I
OL
= 0.1 mA V
CC
= 2.20V 0.4 0.4 0.4 V
I
OL
= 2.1 mA V
CC
= 2.70V 0.4 0.4 0.4 V
V
IH
Input HIGH
Voltage
V
CC
= 2.2V to 2.7V 1.8 V
CC
+
0.3V
1.8 V
CC
+
0.3V
1.8 V
CC
+
0.3V
V
V
CC
= 2.7V to 3.6V 2.2 V
CC
+
0.3V
2.2 V
CC
+
0.3V
2.2 V
CC
+
0.3V
V
V
IL
Input LOW
Voltage
V
CC
= 2.2V to 2.7V –0.3 0.6 –0.3 0.6 –0.3 0.6 V
V
CC
= 2.7V to 3.6V –0.3 0.8 –0.3 0.8 –0.3 0.8 V
I
IX
Input Leakage
Current
GND < V
I
< V
CC
–1 +1 –1 +1 –1 +1 µA
I
OZ
Output
Leakage
Current
GND < V
O
< V
CC
, Output
Disabled
–1 +1 –1 +1 –1 +1 µA
I
CC
V
CC
Operating
Supply
Current
f = f
MAX
=
1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
10 20 8 15 8 15 mA
f = 1 MHz 1.5 3 1.5 3 1.5 3 mA
I
SB1
Automatic
CE
Power-down
Current —
CMOS
Inputs
CE
> V
CC
−0.2V,
V
IN
>V
CC
–0.2V, V
IN
<0.2V)
f = f
MAX
(Address and Data
Only),
f = 0 (OE
, WE, BHE and
BLE
), V
CC
= 3.60V
L212 212 212µA
LL 8 8 8
I
SB2
Automatic
CE
Power-down
Current —
CMOS Inputs
CE
> V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
<
0.2V,
f = 0, V
CC
= 3.60V
L212 212 212µA
LL 8 8 8
Notes:
6. V
IL(min.)
= –2.0V for pulse durations less than 20 ns.
7. V
IH(max)
= V
CC
+0.75V for pulse durations less than 20 ns.
8. Full device AC operation assumes a 100-µs ramp time from 0 to V
CC
(min) and 200 µs wait time after V
CC
stabilization.
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