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CY62146DV30
Document #: 38-05339 Rev. *A Page 4 of 11
Capacitance (for all packages)
[9]
Parameter Description Test Conditions Max. Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
10 pF
C
OUT
Output Capacitance 10 pF
Thermal Resistance
[9]
Parameter Description Test Conditions BGA TSOP II Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 3 × 4.5 inch, four-layer
printed circuit board
72 75.13 °C/W
Θ
JC
Thermal Resistance
(Junction to Case)
8.86 8.95 °C/W
AC Test Loads and Waveforms
[10]
Parameters 2.50V 3.0V Unit
R1 16667 1103 Ω
R2 15385 1554 Ω
R
TH
8000 645 Ω
V
TH
1.20 1.75 V
Data Retention Characteristics (Over the Operating Range)
Parameter Description Conditions Min. Typ.
[5]
Max. Unit
V
DR
V
CC
for Data Retention 1.5 V
I
CCDR
Data Retention Current V
CC
= 1.5V
CE
> V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
L9µA
LL 6
t
CDR
[9]
Chip Deselect to Data Retention Time 0 ns
t
R
[11]
Operation Recovery Time t
RC
ns
V
CC
V
CC
OUTPUT
R2
50 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT V
Equivalent to: THÉ VENIN EQUIVALENT
ALL INPUT PULSES
R
TH
R1
Data Retention Waveform
Notes:
9. Tested initially and after any design or process changes that may affect these parameters.
10.Test condition for the 45 ns part is a load capacitance of 30 pF.
11.Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min.)
> 100 µs or stable at V
CC(min.)
> 100 µs.
V
CC(min)
V
CC(min)
t
CDR
V
DR
> 1.5 V
DATA RETENTION MODE
t
R
V
CC
CE
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