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CY62148E MoBL
®
Document #: 38-05442 Rev. *F Page 3 of 10
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied............................................–55°C to + 125°C
Supply Voltage to Ground
Potential.................................–0.5V to 6.0V (V
CCmax
+ 0.5V)
DC Voltage Applied to Outputs
in High-Z State
[5, 6]
................–0.5V to 6.0V (V
CCmax
+ 0.5V)
DC Input Voltage
[5, 6]
............ –0.5V to 6.0V (V
CCmax
+ 0.5V)
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ......................................................>200mA
Operating Range
Device Range
Ambient
Temperature
V
CC
[7]
CY62148E Ind’l/Auto-A –40°C to +85°C 4.5V to 5.5V
Electrical Characteristics (Over the Operating Range)
Parameter Description Test Conditions
45 ns 55 ns
[2]
Unit
Min Typ
[3]
Max Min Typ
[3]
Max
V
OH
Output HIGH
Voltage
I
OH
= –1 mA 2.4 2.4 V
V
OL
Output LOW Voltage I
OL
= 2.1 mA 0.4 0.4 V
V
IH
Input HIGH Voltage V
CC
= 4.5V to 5.5V 2.2 V
CC
+ 0.5 2.2 V
CC
+ 0.5 V
V
IL
Input LOW voltage V
CC
= 4.5V to 5.5V For TSOPII
package
–0.5 0.8 V
For SOIC
package
–0.5 0.6
[8]
I
IX
Input Leakage
Current
GND < V
I
< V
CC
–1 +1 –1 +1 µA
I
OZ
Output Leakage
Current
GND < V
O
< V
CC
, Output Disabled –1 +1 –1 +1 µA
I
CC
V
CC
Operating
Supply Current
f = f
max
= 1/t
RC
V
CC
= V
CC(max)
I
OUT
= 0 mA
CMOS levels
15 20 15 20 mA
f = 1 MHz 2 2.5 2 2.5
I
SB2
[9]
Automatic CE Power
down Current —
CMOS Inputs
CE
> V
CC
– 0.2V
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= V
CC(max)
17 17µA
Capacitance (For All Packages)
[10]
Parameter Description Test Conditions Max Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
10 pF
C
OUT
Output Capacitance 10 pF
Notes
5. V
IL(min)
= –2.0V for pulse durations less than 20 ns for I < 30 mA.
6. V
IH(max)
= V
CC
+0.75V for pulse durations less than 20 ns.
7. Full device AC operation assumes a minimum of 100 µs ramp time from 0 to V
CC
(min) and 200 µs wait time after V
CC
stabilization.
8. Under DC conditions the device meets a V
IL
of 0.8V. However, in dynamic conditions Input LOW Voltage applied to the device must not be higher than 0.6V. This
is applicable to SOIC package only. Refer to AN13470 for details.
9. Only chip enable (CE
) must be HIGH at CMOS level to meet the I
SB2
spec. Other inputs can be left floating.
10. Tested initially and after any design or process changes that may affect these parameters.
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