Document Number: 001-06348 Rev. *D Revised March 11, 2008 Page 27 of 27
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CY7C1246V18, CY7C1257V18
CY7C1248V18, CY7C1250V18
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Document History Page
Document Title: CY7C1246V18/CY7C1257V18/CY7C1248V18/CY7C1250V18, 36-Mbit DDR-II+ SRAM 2-Word Burst Ar-
chitecture (2.0 Cycle Read Latency)
Document Number: 001-06348
REV. ECN No. Issue Date
Orig. of
Change
Description of Change
** 425689 See ECN NXR New Data Sheet
*A 461639 See ECN NXR Revised the MPNs from
CY7C1257AV18 to CY7C1257V18
CY7C1248AV18 to CY7C1248V18
CY7C1250AV18 to CY7C1250V18
Changed t
TH
and t
TL
from 40 ns to 20 ns, changed t
TMSS
, t
TDIS
, t
CS
, t
TMSH
,
t
TDIH
, t
CH
from
10 ns to 5 ns and changed t
TDOV
from 20 ns to 10 ns in TAP
AC Switching Characteristics table
Modified Power-Up waveform
*B 497628 See ECN NXR Changed the V
DDQ
operating voltage to 1.4V to V
DD
in the Features section,
in Operating Range table and in the DC Electrical Characteristics table
Added foot note in page# 1
Changed the Maximum rating of Ambient Temperature with Power Applied
from –10°C to +85°C to –55°C to +125°C
Changed V
REF
(Max.) spec from 0.85V to 0.95V in the DC Electrical
Characteristics table and in the note below the table
Updated foot note #17 to specify Overshoot and Undershoot Spec
Updated Θ
JA
and Θ
JC
values
Removed x9 part and its related information
Updated footnote #24
*C 1093183 See ECN VKN Converted from preliminary to final
Added x8 and x9 parts
Updated logic block diagram for x18 and x36 parts
Changed I
DD
values from 925 mA to 1210 mA for 375 MHz, 800 mA to 1080
mA for 333 MHz, 725 mA to 1000 mA for 300 MHz
Changed I
SB
values from 290 mA to 320 mA for 375 MHz, 270 mA to 300
mA for 333 MHz, 250 mA to 290 mA for 300 MHz
Changed Θ
JA
value from 12.43 °C/W to 16.25 °C/W
Changed t
CYC
max spec to 8.4 ns for all speed bins
Updated Ordering Information table
*D 2198506 See ECN VKN/AESA Added footnote# 19 related to I
DD
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