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CY7C1441AV33
CY7C1443AV33,CY7C1447AV33
Document #: 38-05357 Rev. *G Page 19 of 31
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage on V
DD
Relative to GND........–0.3V to +4.6V
Supply Voltage on V
DDQ
Relative to GND...... –0.3V to +V
DD
DC Voltage Applied to Outputs
in Tri-State ...........................................–0.5V to V
DDQ
+ 0.5V
DC Input Voltage ...................................–0.5V to V
DD
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Range
Ambient
Temperature
V
DD
V
DDQ
Commercial 0°C to +70°C 3.3V –5%/+10% 2.5V –5%
to V
DD
Industrial –40°C to +85°C
Electrical Characteristics Over the Operating Range
[15, 16]
DC Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions Min. Max. Unit
V
DD
Power Supply Voltage 3.135 3.6 V
V
DDQ
IO Supply Voltage for 3.3V IO 3.135 V
DD
V
for 2.5V IO 2.375 2.625 V
V
OH
Output HIGH Voltage for 3.3V IO, I
OH
= –4.0 mA 2.4 V
for 2.5V IO, I
OH
= –1.0 mA 2.0 V
V
OL
Output LOW Voltage for 3.3V IO, I
OL
= 8.0 mA 0.4 V
for 2.5V IO, I
OL
= 1.0 mA 0.4 V
V
IH
Input HIGH Voltage
[15]
for 3.3V IO 2.0 V
DD
+ 0.3V V
for 2.5V IO 1.7 V
DD
+ 0.3V V
V
IL
Input LOW Voltage
[15]
for 3.3V IO –0.3 0.8 V
for 2.5V IO –0.3 0.7 V
I
X
Input Leakage Current
except ZZ and MODE
GND ≤ V
I
≤ V
DDQ
–5 5 μA
Input Current of MODE Input = V
SS
–30 μA
Input = V
DD
5 μA
Input Current of ZZ Input = V
SS
–5 μA
Input = V
DD
30 μA
I
OZ
Output Leakage Current GND ≤ V
I
≤ V
DDQ,
Output Disabled –5 5 μA
I
DD
V
DD
Operating Supply
Current
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
7.5-ns cycle, 133 MHz 310 mA
10-ns cycle, 100 MHz 290 mA
I
SB1
Automatic CE
Power down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
≥ V
IH
or V
IN
≤ V
IL
, f = f
MAX,
inputs switching
All Speeds 180 mA
I
SB2
Automatic CE
Power down
Current—CMOS Inputs
Max. V
DD
, Device Deselected,
V
IN
≥ V
DD
– 0.3V or V
IN
≤ 0.3V,
f = 0, inputs static
All speeds 120 mA
I
SB3
Automatic CE
Power down
Current—CMOS Inputs
Max. V
DD
, Device Deselected,
V
IN
≥ V
DDQ
– 0.3V or V
IN
≤ 0.3V,
f = f
MAX
, inputs switching
All Speeds 180 mA
I
SB4
Automatic CE
Power down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
≥ V
DD
– 0.3V or V
IN
≤ 0.3V,
f = 0, inputs static
All Speeds 135 mA
Notes
15.Overshoot: V
IH
(AC) < V
DD
+1.5V (Pulse width less than t
CYC
/2), undershoot: V
IL
(AC) > –2V (Pulse width less than t
CYC
/2).
16.T
Power-up
: Assumes a linear ramp from 0V to V
DD
(min.) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD.
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