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CY7C199
Document #: 38-05160 Rev. ** Page 5 of 16
Switching Characteristics Over the Operating Range
[3, 7]
7C199-8 7C199-10 7C199-12 7C199-15
UnitParameter Description
Min. Max. Min. Max. Min. Max. Min. Max.
READ CYCLE
t
RC
Read Cycle Time 8 10 12 15 ns
t
AA
Address to Data Valid 8 101215ns
t
OHA
Data Hold from Address Change 3 333ns
t
ACE
CE LOW to Data Valid 8 101215ns
t
DOE
OE LOW to Data Valid 4.5 5 5 7 ns
t
LZOE
OE LOW to Low Z
[8]
0 000ns
t
HZOE
OE HIGH to High Z
[8, 9]
5557ns
t
LZCE
CE LOW to Low Z
[8]
3 333ns
t
HZCE
CE HIGH to High Z
[8,9]
4557ns
t
PU
CE LOW to Power-Up 0 000ns
t
PD
CE HIGH to Power-Down 8 101215ns
WRITE CYCLE
[10, 11]
t
WC
Write Cycle Time 8 10 12 15 ns
t
SCE
CE LOW to Write End 7 7910ns
t
AW
Address Set-Up to Write End 7 7910ns
t
HA
Address Hold from Write End 0 000ns
t
SA
Address Set-Up to Write Start 0 000ns
t
PWE
WE Pulse Width 7 789ns
t
SD
Data Set-Up to Write End 5 589ns
t
HD
Data Hold from Write End 0 000ns
t
HZWE
WE LOW to High Z
[9]
5677ns
t
LZWE
WE HIGH to Low Z
[8]
3 333ns
Shaded area contains advance information.
Notes:
7. Test conditions assume signal transition time of 3 ns or less for -12 and -15 speeds and 5 ns or less for -20 and slower speeds, timing reference levels of 1.5V,
input pulse levels of 0 to 3.0V, and output loading of the specified I
OL
/I
OH
and 30-pF load capacitance.
8. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
9. t
HZOE
, t
HZCE
, and t
HZWE
are specified with C
L
= 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
10. The internal write time of the memory is defined by the overlap of CE
LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate
a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
11. The minimum write cycle time for write cycle #3 (WE
controlled, OE LOW) is the sum of t
HZWE
and t
SD
.