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FDD6690A Rev. EW)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
E
AS
Drain-Source Avalanche Energy Single Pulse, V
DD
= 15 V, I
D
= 12A 180 mJ
I
AS
Drain-Source Avalanche Current 12 A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
30 V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA,Referenced to 25°C
24
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V 1
µA
I
GSS
Gate–Body Leakage
V
GS
= ±20 V, V
DS
= 0 V ±100
nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
1 1.9 3 V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 µA,Referenced to 25°C
–5
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 10 V, I
D
= 12 A
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 12 A,T
J
=125°C
7.7
9.9
11.4
12
14
19
mΩ
I
D(on)
On–State Drain Current V
GS
= 10 V, V
DS
= 5 V 50 A
g
FS
Forward Transconductance V
DS
= 10 V, I
D
= 12 A 47 S
Dynamic Characteristics
C
iss
Input Capacitance 1230 pF
C
oss
Output Capacitance 325 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
150 pF
R
G
Gate Resistance V
GS
= 15 mV, f = 1.0 MHz 1.5 pF
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 10 19 ns
t
r
Turn–On Rise Time 7 13 ns
t
d(off)
Turn–Off Delay Time 29 46 ns
t
f
Turn–Off Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6 Ω
12 21 ns
Q
g
Total Gate Charge 13 18 nC
Q
gs
Gate–Source Charge 3.5 nC
Q
gd
Gate–Drain Charge
V
DS
= 15V, I
D
= 12 A,
V
GS
= 5 V
5.1 nC
FDD6690A