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Photomicrosensor (Transmissive) EE-SX1107 1
Photomicrosensor (Transmissive)
EE-SX1107
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Features
• Ultra-compact with a 3.4-mm-wide sensor and a 1-mm-wide slot.
• PCB surface mounting type.
• High resolution with a 0.15-mm-wide aperture.
• RoHS Compliant.
■ Absolute Maximum Ratings (Ta = 25° C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Duty: 1/100; Pulse width: 0.1 ms
3. Complete soldering within 10 seconds for reflow soldering
and within 3 seconds for manual soldering.
■ Ordering Information
■ Electrical and Optical Characteristics (Ta = 25° C)
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Recommended Soldering
Pattern
Optical
axis
Cross section AA
Unless otherwise specified, the
tolerances are ±0.15 mm.
Item Symbol Rated value
Emitter Forward current I
F
25 mA (see note 1)
Pulse forward current I
FP
100 mA (see note 2)
Reverse voltage V
R
5 V
Detector Collector–Emitter
voltage
V
CEO
20 V
Emitter–Collector
voltage
V
ECO
5 V
Collector current I
C
20 mA
Collector dissipation P
C
75 mW (see note 1)
Ambient
temperature
Operating Topr –30°C to 85°C
Storage Tstg –40°C to 90°C
Reflow soldering Tsol 240°C (see note 3)
Manual soldering Tsol 300°C (see note 3)
Description Model
Photomicrosensor (transmissive) EE-SX1107
Item Symbol Value Condition
Emitter Forward voltage V
F
1.1 V typ., 1.3 V max. I
F
= 5 mA
Reverse current I
R
10 µA max. V
R
= 5 V
Peak emission wavelength λ
P
940 nm typ. I
F
= 20 mA
Detector Light current I
L
50 µA min., 150 µA typ.,
500 µA max.
I
F
= 5 mA, V
CE
= 5 V
Dark current I
D
100 nA max. V
CE
= 10 V, 0 lx
Leakage current I
LEAK
--- ---
Collector–Emitter saturated voltage V
CE
(sat) 0.1 V typ., 0.4 V max. I
F
= 20 mA, I
L
= 50 µA
Peak spectral sensitivity wavelength λ
P
900 nm typ. ---
Rising time tr 10 µs typ. V
CC
= 5 V, R
L
= 1 kΩ,
I
L
= 100 µA
Falling time tf 10 µs typ. V
CC
= 5 V, R
L
= 1 kΩ,
I
L
= 100 µA